Electronics-semiconductor Principles
Electronics-semiconductor Principles
51. Forward bias of a silicon P-N junction will produce a barrier voltage of approximately how many volts?
- 0.2
- 0.3
- 0.7
- 0.8
53. When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:
- 1949, William Schockley
- 1955, Walter Bratten
- 1959, Robert Noyce
- 1960, John Bardeen
54. When is a P-N junction formed?
- in a depletion region
- in a large reverse biased region
- the point at which two opposite doped materials come together
- whenever there is a forward voltage drop
55. A P-N junction mimics a closed switch when it:
- has a low junction resistance
- is reverse biased
- cannot overcome its barrier voltage
- has a wide depletion region
57. Electron pair bonding occurs when atoms:
- lack electrons
- share holes
- lack holes
- share electrons
59. What is a type of doping material?
- extrinsic semiconductor material
- pentavalent material
- n-type semiconductor
- majority carriers