Electronic Devices and Circuit Theory-Field-Effect Transistors
Electronic Devices and Circuit Theory-Field-Effect Transistors
1. For a JFET, the value of VDS at which ID becomes essentially constant is the
- pinch-off voltage.
- cutoff voltage.
- breakdown voltage.
- ohmic voltage.
2. The ________ has a physical channel between the drain and source.
- D-MOSFET
- E-MOSFET
- V-MOSFET
- [NIL]
3. A self-biased n-channel JFET has a VD = 6 V. VGS = –3 V. Find the value of VDS.
- –3 V
- –6 V
- 3 V
- 6 V
4. What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with?
- zero
- positive
- negative
- any of the above
5. Midpoint bias for a D-MOSFET is ID = ________, obtained by setting VGS = 0.
- IDSS / 2
- IDSS / 3.4
- IDSS
6. On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is
- below the ohmic area.
- between the ohmic area and the constant current area.
- between the constant current area and the breakdown region.
- above the breakdown region.
7. Which of the following devices has the highest input resistance?
- diode
- JFET
- MOSFET
- bipolar junction transistor
8. The value of VGS that makes ID approximately zero is the
- pinch-off voltage.
- cutoff voltage.
- breakdown voltage.
- ohmic voltage.
9. The JFET is always operated with the gate-source pn junction ________ -biased.
- forward
- reverse