Electronic Devices and Circuit Theory-Field-Effect Transistors Questions and Answers

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Q1
For a JFET, the value of VDS at which ID becomes essentially constant is the
  • A pinch-off voltage.
  • B cutoff voltage.
  • C breakdown voltage.
  • D ohmic voltage.
Answer: Option A
Q2
The ________ has a physical channel between the drain and source.
  • A D-MOSFET
  • B E-MOSFET
  • C V-MOSFET
  • D [NIL]
Answer: Option A
Q3
A self-biased n-channel JFET has a VD = 6 V. VGS = –3 V. Find the value of VDS.
  • A –3 V
  • B –6 V
  • C 3 V
  • D 6 V
Answer: Option C
Q4
What type(s) of gate-to-source voltage(s) can a depletion MOSFET (D-MOSFET) operate with?
  • A zero
  • B positive
  • C negative
  • D any of the above
Answer: Option D
Q5
Midpoint bias for a D-MOSFET is ID = ________, obtained by setting VGS = 0.
  • A IDSS / 2
  • B IDSS / 3.4
  • C IDSS
Answer: Option C
Q6
On the drain characteristic curve of a JFET for VGS = 0, the pinch-off voltage is
  • A below the ohmic area.
  • B between the ohmic area and the constant current area.
  • C between the constant current area and the breakdown region.
  • D above the breakdown region.
Answer: Option B
Q7
Which of the following devices has the highest input resistance?
  • A diode
  • B JFET
  • C MOSFET
  • D bipolar junction transistor
Answer: Option C
Q8
The value of VGS that makes ID approximately zero is the
  • A pinch-off voltage.
  • B cutoff voltage.
  • C breakdown voltage.
  • D ohmic voltage.
Answer: Option B
Q9
The JFET is always operated with the gate-source pn junction ________ -biased.
  • A forward
  • B reverse
Answer: Option B
Q10
All MOSFETs are subject to damage from electrostatic discharge (ESD).
  • A true
  • B false
Answer: Option A

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