Electronic Devices and Circuit Theory-Field-Effect Transistors
Electronic Devices and Circuit Theory-Field-Effect Transistors
11. A dual-gated MOSFET is
- a depletion MOSFET.
- an enhancement MOSFET.
- a VMOSFET.
- either a depletion or an enhancement MOSFET.
12. What three areas are the drain characteristics of a JFET (VGS = 0) divided into?
- ohmic, constant-current, breakdown
- pinch-off, constant-current, avalanche
- ohmic, constant-voltage, breakdown
13. In a self-biased JFET circuit, if VD = VDD then ID = ________.
- 0
- cannot be determined from information above
14. The resistance of a JFET biased in the ohmic region is controlled by
- VD.
- VGS.
- VS.
- VDS.
15. The resistance of a JFET biased in the ohmic region is controlled by
- VD.
- VGS.
- VS.
- VDS.
16. High input resistance for a JFET is due to
- a metal oxide layer.
- a large input resistor to the device.
- an intrinsic layer.
- the gate-source junction being reverse-biased.
17. For a JFET, the change in drain current for a given change in gate-to-source voltage, with the drain-to-source voltage constant, is
- breakdown.
- reverse transconductance.
- forward transconductance.
- self-biasing.
18. A JFET data sheet specifies VGS(off) = –6 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.
- 2 mA
- 4 mA
- 8 mA
- none of the above
19. A JFET data sheet specifies VGS(off) = –10 V and IDSS = 8 mA. Find the value of ID when VGS = –3 V.
- 2 mA
- 1.4 mA
- 4.8 mA
- 3.92 mA
20. If VD is less than expected (normal) for a self-biased JFET circuit, then it could be caused by a(n)
- open RG.
- open gate lead.
- FET internally open at gate.
- all of the above