Electronic Devices and circuits Theory-Diode Applications
Electronic Devices and circuits Theory-Diode Applications
11. Which statement best describes an insulator?
- A material with many free electrons.
- A material doped to have some free electrons.
- A material with few free electrons.
- No description fits.
12. Effectively, how many valence electrons are there in each atom within a silicon crystal?
- 2
- 4
- 8
- 16
13. The boundary between p-type material and n-type material is called
- a diode.
- a reverse-biased diode.
- a pn junction.
- a forward-biased diode.
14. You have an unknown type of diode in a circuit. You measure the voltage across it and find it to be 0.3 V. The diode might be
- a silicon diode.
- a germanium diode.
- a forward-biased silicon diode.
- a reverse-biased germanium diode.
15. An ideal diode presents a(n) ________ when reversed-biased and a(n) ________ when forward-biased.
- open, short
- short, open
- open, open
- short, short
16. A reverse-biased diode has the ________ connected to the positive side of the source, and the ________ connected to the negative side of the source.
- cathode, anode
- cathode, base
- base, anode
- anode, cathode
17. What types of impurity atoms are added to increase the number of conduction-band electrons in intrinsic silicon?
- bivalent
- octavalent
- pentavalent
- trivalent
18. What factor(s) do(es) the barrier potential of a pn junction depend on?
- type of semiconductive material
- the amount of doping
- the temperature
- all of the above
20. Reverse breakdown is a condition in which a diode
- is subjected to a large reverse voltage.
- is reverse-biased and there is a small leakage current.
- has no current flowing at all.
- is heated up by large amounts of current in the forward direction.