Electronic Devices and circuits Theory-Diode Applications

Electronic Devices and circuits Theory-Diode Applications
21. There is a small amount of current across the barrier of a reverse-biased diode. This current is called
  • forward-bias current.
  • reverse breakdown current.
  • conventional current.
  • reverse leakage current.
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22. As the forward current through a silicon diode increases, the voltage across the diode
  • increases to a 0.7 V maximum.
  • decreases.
  • is relatively constant.
  • decreases and then increases.
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23. Doping of a semiconductor material means
  • that a glue-type substance is added to hold the material together.
  • that impurities are added to increase the resistance of the material.
  • that impurities are added to decrease the resistance of the material.
  • that all impurities are removed to get pure silicon.
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24. The forward voltage across a conducting silicon diode is about
  • 0.3 V.
  • 1.7 V.
  • –0.7 V.
  • 0.7 V.
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25. The most common type of diode failure is a(n) ________.
  • open
  • short
  • resistive
  • [NIL]
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26. What occurs when a conduction-band electron loses energy and falls back into a hole in the valence band?
  • doping
  • recombination
  • generation
  • [NIL]
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27. The maximum number of electrons in each shell of an atom is
  • 2.
  • 2n2 where n is the number of the shell.
  • 4.
  • 8.
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28. A silicon diode is forward-biased. You measure the voltage to ground from the anode at ________, and the voltage from the cathode to ground at ________.
  • 0 V, 0.3 V
  • 2.3 V, 1.6 V
  • 1.6 V, 2.3 V
  • 0.3 V, 0 V
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29. The term bias in electronics usually means
  • the value of ac voltage in the signal.
  • the condition of current through a pn junction.
  • the value of dc voltages for the device to operate properly.
  • the status of the diode.
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30. A reverse-biased silicon diode has about 0.7 V across it.
  • TRUE
  • FALSE
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